Impact of Confinement of Semiconductor and Band Engineering on Future Device Performance
نویسندگان
چکیده
A rigorous analysis of the subband structure in thin silicon films under stress is performed. Calculated subband effective masses are shown to depend on shear strain and thickness simultaneously. The effective masses and the subband splitting determine transport in silicon films. Decrease of the transport effective mass controlled by the shear strain component guarantees mobility enhancement even in ultra-thin silicon films. This increase of mobility and drive current combined with the improved channel control makes multigate MOSFETs based on thin films or silicon fins preeminent candidates for the 22nm technology node and beyond.
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